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june 2011 doc id 15428 rev 5 1/23 23 std12n65m5, STF12N65M5, sti12n65m5 stp12n65m5, stu12n65m5 n-channel 650 v, 0.39 ? , 8.5 a mdmesh? v power mosfet dpak, i 2 pak, to-220fp, to-220, ipak features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance easy to drive 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroe lectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d p tot std12n65m5 STF12N65M5 sti12n65m5 stp12n65m5 stu12n65m5 710 v < 0.43 ? 8.5 a 8.5 a (1) 8.5 a 8.5 a 8.5 a 1. limited only by maximum temperature allowed. 70 w 25 w 70 w 70 w 70 w dpak ipak 3 2 1 1 3 1 2 3 to-220 1 2 3 to-220fp 1 2 3 i2pak !-v $ ' 3 table 1. device summary order codes marking packages packaging std12n65m5 STF12N65M5 sti12n65m5 stp12n65m5 stu12n65m5 12n65m5 dpak to-220fp i2pak to-220 ipak tape and reel tu b e tu b e tu b e tu b e www.st.com
contents std/f/i/p/u12n65m5 2/23 doc id 15428 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
std/f/i/p/u12n65m5 electrical ratings doc id 15428 rev 5 3/23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, ipak, dpak, i2pak to-220fp v ds drain-source voltage (v gs = 0) 650 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 8.5 8.5 (1) 1. limited only by maximu m temperature allowed. a i d drain current (continuous) at t c = 100 c 5.4 5.4 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 34 34 (1) a p tot total dissipation at t c = 25 c 70 25 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 2.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 150 mj dv/dt (3) 3. i sd 8.5 a, di/dt 400 a/s; v peak < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak ipak i2pak to-220 to-220fp r thj-case thermal resistance junction-case max 1.79 5 c/w r thj-amb thermal resistance junction- ambient max 100 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics std/f/i/p/u12n65m5 4/23 doc id 15428 rev 5 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 4.3 a 0.39 0.43 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 900 22 2 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -64-pf c o(er) (2) 2. energy related is defined as a constant equivalent capacitance gi ving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -21-pf r g intrinsic gate resistance f = 1 mhz open drain - 2.5 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 4.25 a, v gs = 10 v (see figure 20 ) - 20 4.8 8.3 - nc nc nc
std/f/i/p/u12n65m5 electrical characteristics doc id 15428 rev 5 5/23 table 6. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f (i) t c (off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 5 a, r g = 4.7 ?, v gs = 10 v (see figure 21 and figure 24 ) - 22.6 17.6 15.6 23.4 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 8.5 34 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 8.5 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 8.5 a, di/dt = 100 a/s v dd = 100 v (see figure 24 ) 230 2.2 19 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 8.5 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 24 ) 280 2.7 19 ns c a
electrical characteristics std/f/i/p/u12n65m5 6/23 doc id 15428 rev 5 2.1 electrical characteristics (c urves) figure 2. safe operating area for to-220 and i2pak figure 3. thermal impedance for to-220 and i2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for dpak, ipak figure 7. thermal impedance for dpak, ipak i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am05572v1 ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3inlge pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3inlge pulse !-v
std/f/i/p/u12n65m5 electrical characteristics doc id 15428 rev 5 7/23 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 6 4 2 0 0 10 v d s (v) 20 (a) 5 15 25 8 10 5v 6v 7v v g s =10v 3 0 12 14 am05575v1 i d 6 4 2 0 0 4 v g s (v) 8 (a) 2 6 10 8 10 12 v d s = 20v am05576v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =520v i d =4.25a 12 3 00 200 100 0 400 500 v d s 600 am0557 8 v1 r d s (on) 0.2 3 0.1 8 0.1 3 0.0 8 0 2 i d (a) ( ? ) 1 3 0.2 8 0. 33 0. 38 0.4 3 45 6 7 8 9 v g s = 10v am05577v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am05579v1 e o ss 1.5 1.0 0.5 0 0 100 v d s (v) ( j) 400 2.0 200 3 00 2.5 3 .0 500 600 3 .5 4.0 am055 8 0v1
electrical characteristics std/f/i/p/u12n65m5 8/23 doc id 15428 rev 5 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss @ 1 ma vs temperature figure 18. switching losses vs gate resistance (1) 1. eon including reverse re covery of a sic diode v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am055 8 1v1 r d s (on) 1.7 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1. 3 1.9 2.1 125 i d = 4.25 a v g s = 10 v am05501v2 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am055 8 4v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 am055 83 v1 e 10 0 0 20 r g ( ? ) ( j) 10 3 0 20 3 0 40 i d =5a v dd =400v eon eoff 40 50 60 am055 8 5v1
std/f/i/p/u12n65m5 test circuits doc id 15428 rev 5 9/23 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive wavefor m figure 24. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ !-v )nductive,oad4urn off )d 6gs 6ds 6ds )d 6gs on t d v t c off 6ds )d 6gs)t on t f i t r v
package mechanical data std/f/i/p/u12n65m5 10/23 doc id 15428 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
std/f/i/p/u12n65m5 package mechanical data doc id 15428 rev 5 11/23 table 8. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data std/f/i/p/u12n65m5 12/23 doc id 15428 rev 5 figure 25. dpak (to-252) drawing figure 26. dpak footprint (a) a. all dimension ar e in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
std/f/i/p/u12n65m5 package mechanical data doc id 15428 rev 5 13/23 table 9. ipak (to-251) mechanical data dim. mm. min. typ max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.3 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10 o
package mechanical data std/f/i/p/u12n65m5 14/23 doc id 15428 rev 5 figure 27. ipak (to-251) drawing 006 8 771_h am09214v1
std/f/i/p/u12n65m5 package mechanical data doc id 15428 rev 5 15/23 table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e 10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
package mechanical data std/f/i/p/u12n65m5 16/23 doc id 15428 rev 5 figure 28. i2pak (to-262) drawing 00159 88 _typea_rev_ s
std/f/i/p/u12n65m5 package mechanical data doc id 15428 rev 5 17/23 table 11. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
package mechanical data std/f/i/p/u12n65m5 18/23 doc id 15428 rev 5 figure 29. to-220 type a drawing 00159 88 _typea_rev_ s
std/f/i/p/u12n65m5 package mechanical data doc id 15428 rev 5 19/23 figure 30. to-220fp drawing table 12. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
packaging mechanical data std/f/i/p/u12n65m5 20/23 doc id 15428 rev 5 5 packaging mechanical data table 13. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
std/f/i/p/u12n65m5 packaging mechanical data doc id 15428 rev 5 21/23 figure 31. tape figure 32. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history std/f/i/p/u12n65m5 22/23 doc id 15428 rev 5 6 revision history table 14. document revision history date revision changes 24-feb-2009 1 first release 27-feb-2009 2 corrected package information on first page 21-jan-2010 3 document status promoted from preliminary data to datasheet 29-jun-2010 4 ? figure 15: normalized on resistance vs temperature has been updated ?v gs vale in table 4 has been corrected 22-jun-2011 5 updated figure 18 and figure 20 . updated gate charge in table 5 and switching time in table 6 .
std/f/i/p/u12n65m5 doc id 15428 rev 5 23/23 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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